@article{zu28341,
          volume = {5941},
           title = {Remote temperature mapping of high-power InGaN/GaN MQW
flip-chip design LEDs},
          author = {V. K. Malyutenko and O. Y. Malyutenko and A. V. Zinovchuk and ?. L. Zakhe?m},
       publisher = {International society for optics and photonics},
            year = {2005},
           pages = {59411K--1},
         journal = {Proceedings of SPIE},
        keywords = {InGaN/GaN, quantum wells, light-emitting diodes, thermal imaging.},
             url = {http://eprints.zu.edu.ua/8341/},
        abstract = {We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and
temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting
devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 {\ensuremath{\mu}}m spectral range, {\ensuremath{<}}20 {\ensuremath{\mu}}m spatial and 10 {\ensuremath{\mu}}s temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.}
}