relation: http://eprints.zu.edu.ua/8341/
title: Remote temperature mapping of high-power InGaN/GaN MQW  flip-chip design LEDs
creator: Malyutenko, V. K.
creator: Malyutenko, O. Y.
creator: Zinovchuk, A. V.
creator: Zakheіm, А. L.
subject: QC Фізика
description: We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and  temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting  devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 μm spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.
publisher: International society for optics and photonics
date: 2005
type: Стаття
type: PeerReviewed
format: text
language: uk
identifier: http://eprints.zu.edu.ua/8341/1/GetPDFServletfiletype.pdf
identifier:   Malyutenko, V. K., Malyutenko, O. Y., Zinovchuk, A. V., Zakheіm, А. L.  (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs.  Proceedings of SPIE, 5941.  59411K-1.  ISSN 9780819459466     
relation: http://spie.org/
language: english