%0 Journal Article
%@ 9780819459466
%A Malyutenko, V. K.
%A Malyutenko, O. Y.
%A Zinovchuk, A. V.
%A Zakheіm, А. L.
%D 2005
%F zu2:8341
%I International society for optics and photonics
%J Proceedings of SPIE
%K InGaN/GaN, quantum wells, light-emitting diodes, thermal imaging.
%P 59411K-1
%T Remote temperature mapping of high-power InGaN/GaN MQW  flip-chip design LEDs
%U http://eprints.zu.edu.ua/8341/
%V 5941
%X We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and  temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting  devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 μm spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.