TY  - JOUR
ID  - zu28341
UR  - http://spie.org/
A1  - Malyutenko, V. K.
A1  - Malyutenko, O. Y.
A1  - Zinovchuk, A. V.
A1  - Zakhe?m, ?. L.
Y1  - 2005///
N2  - We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and
temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting
devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 ?m spectral range, <20 ?m spatial and 10 ?s temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.
PB  - International society for optics and photonics
JF  - Proceedings of SPIE
VL  - 5941
KW  - InGaN/GaN
KW  -  quantum wells
KW  -  light-emitting diodes
KW  -  thermal imaging.
SN  - 9780819459466
TI  - Remote temperature mapping of high-power InGaN/GaN MQW
flip-chip design LEDs
SP  - 59411K
AV  - public
EP  - 1
ER  -