@article{zu28344,
          volume = {23},
           title = {Bandgap dependence of current crowding effect in 3?5 {\ensuremath{\mu}}m InAsSb/InAs planar light emitting devices},
          author = {V. K. Malyutenko and A. V. Zinovchuk and O. Y. Malyutenko},
       publisher = {Institute of Physics},
            year = {2008},
           pages = {085004--1},
         journal = {Semiconductor Science and Technology},
        keywords = {current crowding, InAsSb/InAs, light emitting devices},
             url = {http://eprints.zu.edu.ua/8344/},
        abstract = {Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3?5 {\ensuremath{\mu}}m band. Light
confined to a small region around the top opaque contact was observed (cw mode, I {\ensuremath{>}} 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The
effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 {\ensuremath{\mu}}m emitting devices are related as {\ensuremath{>}}10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.}
}