relation: http://eprints.zu.edu.ua/8344/
title: Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices
creator: Malyutenko, V. K.
creator: Zinovchuk, A. V.
creator: Malyutenko, O. Y.
subject: QC Фізика
description: Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3–5 μm band. Light  confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The  effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 μm emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.
publisher: Institute of Physics
date: 2008
type: Стаття
type: PeerReviewed
format: text
language: uk
identifier: http://eprints.zu.edu.ua/8344/1/Band%20gap.pdf
identifier:   Malyutenko, V. K., Zinovchuk, A. V., Malyutenko, O. Y.  (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices.  Semiconductor Science and Technology, 23.  085004-1.      
relation: http://iopscience.iop.org/
language: english