%0 Journal Article
%A Malyutenko, V. K.
%A Zinovchuk, A. V.
%A Malyutenko, O. Y.
%D 2008
%F zu2:8344
%I Institute of Physics
%J Semiconductor Science and Technology
%K current crowding, InAsSb/InAs, light emitting devices
%P 085004-1
%T Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices
%U http://eprints.zu.edu.ua/8344/
%V 23
%X Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3–5 μm band. Light  confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The  effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 μm emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.