TY  - JOUR
ID  - zu28344
UR  - http://iopscience.iop.org/
A1  - Malyutenko, V. K.
A1  - Zinovchuk, A. V.
A1  - Malyutenko, O. Y.
Y1  - 2008///
N2  - Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3?5 ?m band. Light
confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The
effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 ?m emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.
PB  - Institute of Physics
JF  - Semiconductor Science and Technology
VL  - 23
KW  - current crowding
KW  -  InAsSb/InAs
KW  -  light emitting devices
TI  - Bandgap dependence of current crowding effect in 3?5 ?m InAsSb/InAs planar light emitting devices
SP  - 085004
AV  - public
EP  - 1
ER  -