%A V. K. Malyutenko
%A A. V. Zinovchuk
%A O. Y. Malyutenko
%J Semiconductor Science and Technology
%T Bandgap dependence of current crowding effect in 3?5 ?m InAsSb/InAs planar light emitting devices
%X Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3?5 ?m band. Light
confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The
effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 ?m emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.
%K current crowding, InAsSb/InAs, light emitting devices
%P 085004-1
%V 23
%D 2008
%I Institute of Physics
%L zu28344