eprintid: 8344
rev_number: 14
eprint_status: archive
userid: 1567
dir: disk0/00/00/83/44
datestamp: 2012-11-21 11:57:29
lastmod: 2016-10-10 09:09:33
status_changed: 2012-11-21 11:57:29
type: article
metadata_visibility: show
title: Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices
language: english
abstract: Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3–5 μm band. Light
confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The
effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 μm emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.
keywords: current crowding, InAsSb/InAs, light emitting devices
coverage: Solid State physics
creators_name: Malyutenko, V. K.
creators_name: Zinovchuk, A. V.
creators_name: Malyutenko, O. Y.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2008
date_type: published
publication: Semiconductor Science and Technology
volume: 23
publisher: Institute of Physics
pagerange: 085004-1
refereed: TRUE
official_url: http://iopscience.iop.org/
citation:   Malyutenko, V. K., Zinovchuk, A. V., Malyutenko, O. Y.  (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices.  Semiconductor Science and Technology, 23.  085004-1.      
document_url: http://eprints.zu.edu.ua/8344/1/Band%20gap.pdf