%0 Journal Article
%@ 1605-6582
%A Sorokіn, V. М.
%A Konakova, R. V.
%A Kudryk, Y. Y.
%A Zinovchuk, A. V.
%D 2012
%F zu2:8347
%I Institute of Semiconductor Physics of Ukraine
%J Semiconductor Physics, Quantum Electronics & Optoelectronics
%K thermal resistance, light emitting diodes, nitrides
%N 12
%P 124-128
%T Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs
%U http://eprints.zu.edu.ua/8347/
%V 15
%X We present a setup and procedure of studying p-n junction–package thermal  resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of  LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and  LED chip are separated.