%A V. ?. Sorok?n
%A R. V. Konakova
%A Y. Y. Kudryk
%A A. V. Zinovchuk
%J Semiconductor Physics, Quantum Electronics & Optoelectronics
%T Technique and setup for diagnostics of p-n junction?package thermal resistance in high-power gallium nitride LEDs
%X We present a setup and procedure of studying p-n junction?package thermal
resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of
LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and
LED chip are separated.
%N 12
%K thermal resistance, light emitting diodes, nitrides
%P 124-128
%V 15
%D 2012
%I Institute of Semiconductor Physics of Ukraine
%L zu28347