eprintid: 8347
rev_number: 14
eprint_status: archive
userid: 1567
dir: disk0/00/00/83/47
datestamp: 2012-11-21 11:58:24
lastmod: 2016-10-10 09:03:18
status_changed: 2012-11-21 11:58:24
type: article
metadata_visibility: show
title: Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs
language: english
abstract: We present a setup and procedure of studying p-n junction–package thermal
resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of
LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and
LED chip are separated.
keywords: thermal resistance, light emitting diodes, nitrides
coverage: Solid State Physics
creators_name: Sorokіn, V. М.
creators_name: Konakova, R. V.
creators_name: Kudryk, Y. Y.
creators_name: Zinovchuk, A. V.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2012
date_type: published
publication: Semiconductor Physics, Quantum Electronics & Optoelectronics
volume: 15
number: 12
publisher: Institute of Semiconductor Physics of Ukraine
pagerange: 124-128
refereed: TRUE
issn: 1605-6582
official_url: http://www.journal-spqeo.org.ua/
citation:   Sorokіn, V. М., Konakova, R. V., Kudryk, Y. Y., Zinovchuk, A. V.  (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs.  Semiconductor Physics, Quantum Electronics & Optoelectronics, 15 (12).  с. 124-128.  ISSN 1605-6582     
document_url: http://eprints.zu.edu.ua/8347/1/sqo%202012%20N2%20p124-128.pdf