%0 Journal Article
%@ 1090-6533
%A Kudryk, Y. Y.
%A Zinovchuk, A. V.
%D 2012
%F zu2:8349
%I Springer
%J Technical Physics Letters
%K Current Crowding, Light-Emitting Diodes,InAsSb/InAs
%N 5
%P 14-20
%T The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes
%U http://eprints.zu.edu.ua/8349/
%V 38
%X The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-  emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied.  Calculations based on a modified model of recombination coefficients show that current crowding leads to a  significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23%  at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding  should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR  LEDs.