eprintid: 8349
rev_number: 20
eprint_status: archive
userid: 1567
dir: disk0/00/00/83/49
datestamp: 2016-04-22 08:53:59
lastmod: 2016-10-10 09:00:21
status_changed: 2016-04-22 08:53:59
type: article
metadata_visibility: show
title: The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes
language: english
abstract: The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-
emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied.
Calculations based on a modified model of recombination coefficients show that current crowding leads to a
significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23%
at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding
should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR
LEDs.
keywords: Current Crowding, Light-Emitting Diodes,InAsSb/InAs
coverage: Solid State Physics
creators_name: Kudryk, Y. Y.
creators_name: Zinovchuk, A. V.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2012
date_type: published
publication: Technical Physics Letters
volume: 38
number: 5
publisher: Springer
pagerange: 14-20
refereed: TRUE
issn: 1090-6533
official_url: http://link.springer.com/journal/11455
citation:   Kudryk, Y. Y., Zinovchuk, A. V.  (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes.  Technical Physics Letters, 38 (5).  с. 14-20.  ISSN 1090-6533     
document_url: http://eprints.zu.edu.ua/8349/1/TEPL456.pdf