relation: http://eprints.zu.edu.ua/8351/
title: Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
creator: Kudryk, Y. Y.
creator: Zinovchuk, A. V.
subject: QC Фізика
description: We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN  light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical  model of internal quantum efficiency calculation is presented that takes into account  nonuniform lateral carrier injection in the active region. Based on this model, we examine the  effect of current crowding on the efficiency droop using comparison of simulated internal  quantum efficiency of InGaN LEDs with low and high uniformity of current spreading. The  results of simulations and measurements show that the devices with low uniformity of current  spreading exhibit higher efficiency droop and lower roll-off current value.
publisher: IOP Publishing
date: 2011
type: Стаття
type: PeerReviewed
format: text
language: uk
identifier: http://eprints.zu.edu.ua/8351/1/0268-1242_26_9_095007.pdf
identifier:   Kudryk, Y. Y., Zinovchuk, A. V.  (2011) Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading.  Semiconductor Science and Technology, 26.  095007-1.  ISSN 1361-6641     
relation: http://iopscience.iop.org
language: english