eprintid: 8351
rev_number: 13
eprint_status: archive
userid: 1567
dir: disk0/00/00/83/51
datestamp: 2012-11-21 12:10:43
lastmod: 2016-10-10 09:08:05
status_changed: 2012-11-21 12:10:43
type: article
metadata_visibility: show
title: Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
language: english
abstract: We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN
light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical
model of internal quantum efficiency calculation is presented that takes into account
nonuniform lateral carrier injection in the active region. Based on this model, we examine the
effect of current crowding on the efficiency droop using comparison of simulated internal
quantum efficiency of InGaN LEDs with low and high uniformity of current spreading. The
results of simulations and measurements show that the devices with low uniformity of current
spreading exhibit higher efficiency droop and lower roll-off current value.
keywords: Efficiency droop, InGaN/GaN, nonuniform current spreading
coverage: Solid State Physics
creators_name: Kudryk, Y. Y.
creators_name: Zinovchuk, A. V.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2011
date_type: published
publication: Semiconductor Science and Technology
volume: 26
publisher: IOP Publishing
pagerange: 095007-1
refereed: TRUE
issn: 1361-6641
official_url: http://iopscience.iop.org
citation:   Kudryk, Y. Y., Zinovchuk, A. V.  (2011) Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading.  Semiconductor Science and Technology, 26.  095007-1.  ISSN 1361-6641     
document_url: http://eprints.zu.edu.ua/8351/1/0268-1242_26_9_095007.pdf