%0 Journal Article
%A Kudryk, Y. Y.
%A Ткаченко, О. К.
%A Zinovchuk, A. V.
%D 2012
%F zu2:8353
%I IOP Publishing
%J Semiconductor Science Technology
%K efficiency droop, InGaN/GaN, current crowding
%N 5
%T Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding
%U http://eprints.zu.edu.ua/8353/
%V 27
%X Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well  InGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is  analysed using the modified rate equation model that takes into account the current crowding  effect at different temperatures. The results of calculations are consistent with the fact that  droop in IQE at higher currents originates from Auger recombination increased by current  crowding. It is shown that unusual experimentally observed temperature dependence of the  efficiency droop can be explained by stronger lateral nonuniformity of carrier injection at low  temperatures without any assumptions about carrier delocalization from In-rich regions in  quantum wells.