eprintid: 8353
rev_number: 17
eprint_status: archive
userid: 1567
dir: disk0/00/00/83/53
datestamp: 2012-11-21 12:02:04
lastmod: 2016-10-10 09:07:30
status_changed: 2012-11-21 12:02:04
type: article
metadata_visibility: show
title: Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding
language: english
abstract: Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well
InGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is
analysed using the modified rate equation model that takes into account the current crowding
effect at different temperatures. The results of calculations are consistent with the fact that
droop in IQE at higher currents originates from Auger recombination increased by current
crowding. It is shown that unusual experimentally observed temperature dependence of the
efficiency droop can be explained by stronger lateral nonuniformity of carrier injection at low
temperatures without any assumptions about carrier delocalization from In-rich regions in
quantum wells.
keywords: efficiency droop, InGaN/GaN, current crowding
coverage: Solid State Physics
status: final
role: author
creators_name: Kudryk, Y. Y.
creators_name: Ткаченко, О. К.
creators_name: Zinovchuk, A. V.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2012
date_type: published
publication: Semiconductor Science Technology
volume: 27
number: 5
publisher: IOP Publishing
refereed: TRUE
official_url: http://iopscience.iop.org
citation:   Kudryk, Y. Y., Ткаченко, О. К., Zinovchuk, A. V.  (2012) Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding.  Semiconductor Science Technology, 27 (5).       
document_url: http://eprints.zu.edu.ua/8353/1/0268-1242_27_5_055013.pdf