Електронна бібліотека Житомирського державного університету: Ніяких умов. Результати впорядковані-Дата внесення. 2024-03-28T23:15:14ZEPrintshttp://eprints.zu.edu.ua/images/logo2.gifhttp://eprints.zu.edu.ua/2014-11-25T12:16:04Z2015-08-15T10:28:28Zhttp://eprints.zu.edu.ua/id/eprint/14144Цей елемент знаходиться в архіві з URL: http://eprints.zu.edu.ua/id/eprint/141442014-11-25T12:16:04ZOn a feature of temperature dependence of contact resistivity
for ohmic contacts to n-Si with an n+-n doping step
We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation. А. V. SachenкoА. Е. BelyaevN. S. BoltovetsА. О. VіnogradovV. А. PіlіpenкoV. N. Sheremet2014-02-03T07:37:51Z2015-08-15T05:39:13Zhttp://eprints.zu.edu.ua/id/eprint/10520Цей елемент знаходиться в архіві з URL: http://eprints.zu.edu.ua/id/eprint/105202014-02-03T07:37:51ZMechanism of contact resistance formation in ohmic contacts with high dislocation densityA new mechanism of contact resistance formation in ohmic contacts with high dislocation density is
proposed. Its specific feature is the appearance of a characteristic region where the contact resistance
increases with temperature. According to the mechanism revealed, the current flowing through the
metal shunts associated with dislocations is determined by electron diffusion. It is shown that current
flows through the semiconductor near-surface regions where electrons accumulate. A feature of the
mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk
resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as
silicon-based materials. A reasonable agreement between theory and experimental results is obtainedА. V. SachenкoА. Е. BelyaevN. S. BoltovetsR. V. KonaкovaY. Y. KudryкS. V. NovytsкyіV. N. SheremetJ. LіS. А. Vіtusevіch2014-02-03T06:57:54Z2015-08-15T05:40:08Zhttp://eprints.zu.edu.ua/id/eprint/10538Цей елемент знаходиться в архіві з URL: http://eprints.zu.edu.ua/id/eprint/105382014-02-03T06:57:54ZA new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation densityAbout new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density А. V. SachenкoА. Е. BelyaevN. S. BoltovetsR. V. KonaкovaY. Y. KudryкS. V. NovytsкyіV. N. SheremetJ. LіS. А. Vіtusevіch