Електронна бібліотека Житомирського державного університету: Ніяких умов. Результати впорядковані-Дата внесення.
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Fri, 29 Mar 2024 16:49:04 +0200Fri, 29 Mar 2024 16:49:04 +0200uk On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
http://eprints.zu.edu.ua/14144/
Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Vіnogradov, А. О., Pіlіpenкo, V. А., Sheremet, V. N. (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1). с. 1-6. Mechanism of contact resistance formation in ohmic contacts with high dislocation density
http://eprints.zu.edu.ua/10520/
Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А. (2012) Mechanism of contact resistance formation in ohmic contacts with high dislocation density. Journal of Applied Physics, 111 (8). 083701-083701. ISSN 0021-8979 A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
http://eprints.zu.edu.ua/10538/
Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). с. 49.