Будник, Т.
(2014)
Modeling of voltammetric characteristic for tunneling-resonant structure
based on AlGaAs/GaAs semiconductor.
Фахівець ХХІ століття: професійні мовні компетенції : матеріали Всеукраїнської науково-практичної конференції для студентів немовних спеціальностей.
с. 15-17.
Опис
Transport of charge carriers in low-dimensional structures is often caused
by tunneling effect. Tunneling means transiting of electron through the area limited
by the potential energy barrier higher than the energy of electron [1]. Tunneling of
electrons in low dimensional structures is determined not only by the energy of
potential barriers, but also by allowed energy states for electrons within the
structure.
Actions (login required)
 |
Перегляд елементу |
