Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection

Malyutenko, V. K., Malyutenko, O. Y., Zinovchuk, A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter, 89. с. 201114-201117. ISSN 1077-3118

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Опис

The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several wavelengths inside the 3–5 mkm band were tested. Light pattern, radiation apparent temperature Ta, thermal resistance, and self-heating details were characterized at T=300 K in microscale by calibrated infrared cameras operating in the 3–5 and 8–12 mkm bands. The authors show that LEDs dynamically simulate very hot Ta=750 K targets as well as cold objects and low observable. They resume that low cost LEDs enable a platform for photonic scene projection devices able to compete with thermal microemitter technology. Proposals on how to further increase LEDs performance are given.

Тип елементу :	Стаття
Ключові слова:	InAsSbP/InAs, light emitting diodes, dynamic scene projection
Теми:	Q Наука > QC Фізика
Підрозділи:	Фізико-математичний факультет > Кафедра фізики та методики її навчання
Користувач, що депонує:	Богдан Свищ
Дата внесення:	21 Лист 2012 13:24
Останні зміни:	10 Жов 2016 09:11
URI:	http://eprints.zu.edu.ua/id/eprint/8286

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