On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Vіnogradov, А. О. and Pіlіpenкo, V. А. and Sheremet, V. N. (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1). pp. 1-6.

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Abstract

We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics and Labor Protection
Depositing User: Богдан Свищ
Date Deposited: 25 Nov 2014 12:16
Last Modified: 15 Aug 2015 10:28
URI: http://eprints.zu.edu.ua/id/eprint/14144

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