Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Vіnogradov, А. О., Pіlіpenкo, V. А., Sheremet, V. N.
(2014)
On a feature of temperature dependence of contact resistivity
for ohmic contacts to n-Si with an n+-n doping step.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1).
с. 1-6.
Опис
We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation.
Actions (login required)
 |
Перегляд елементу |
