Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection

Malyutenko, V. K. and Malyutenko, O. Y. and Zinovchuk, A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter, 89. pp. 201114-201117. ISSN 1077-3118

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Abstract

The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several wavelengths inside the 3–5 mkm band were tested. Light pattern, radiation apparent temperature Ta, thermal resistance, and self-heating details were characterized at T=300 K in microscale by calibrated infrared cameras operating in the 3–5 and 8–12 mkm bands. The authors show that LEDs dynamically simulate very hot Ta=750 K targets as well as cold objects and low observable. They resume that low cost LEDs enable a platform for photonic scene projection devices able to compete with thermal microemitter technology. Proposals on how to further increase LEDs performance are given.

Item Type: Article
Uncontrolled Keywords: InAsSbP/InAs, light emitting diodes, dynamic scene projection
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics
Depositing User: Богдан Свищ
Date Deposited: 21 Nov 2012 13:24
Last Modified: 10 Oct 2016 09:11
URI: http://eprints.zu.edu.ua/id/eprint/8286

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