Sachenko А. V., Belyaev А. Е., Boltovets N. S., Konakova R. V., Kudryк Y. Y., Novytsкyі S. V., Sheremet V. N., Lі J. and Vіtusevіch S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). p. 49.
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Abstract
About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | С.В. Новицький |
| Date Deposited: | 03 Feb 2014 08:57 |
| Last Modified: | 15 Aug 2015 08:40 |
| URI: | https://eprints.zu.edu.ua/id/eprint/10538 |
| ДСТУ 8302:2015: | A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density / А. V. Sachenko та ін. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). 2012. p. 49. |
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