Novytsкyі S. V. (2011) Effect of thermal annealing on the electrical parameters of ohmic contacts to n-n+-n++-InP. Materials of a conf. [XIII International conf. «Physics and technology of thin films and nanosystems» (ICPTTFN-XIII)]Ivano-Frankivsk, Ukraine, 16—21 May 2011 y.). Т. 1. p. 112.
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| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | С.В. Новицький |
| Date Deposited: | 16 Apr 2014 10:23 |
| Last Modified: | 15 Aug 2015 09:16 |
| URI: | https://eprints.zu.edu.ua/id/eprint/11040 |
| ДСТУ 8302:2015: | Novytsкyі S. V. Effect of thermal annealing on the electrical parameters of ohmic contacts to n-n+-n++-InP. Materials of a conf. [XIII International conf. «Physics and technology of thin films and nanosystems» (ICPTTFN-XIII)]Ivano-Frankivsk, Ukraine, 16—21 May 2011 y.). 2011. Т. 1. p. 112. |
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