Modeling of voltammetric characteristic for tunneling-resonant structure based on AlGaAs/GaAs semiconductor.

Transport of charge carriers in low-dimensional structures is often caused
by tunneling effect. Tunneling means transiting of electron through the area limited
by the potential energy barrier higher than the energy of electron [1]. Tunneling of
electrons in low dimensional structures is determined not only by the energy of
potential barriers, but also by allowed energy states for electrons within the
structure.