Sachenko А. V., Belyaev А. Е., Boltovets N. S., Vіnogradov А. О., Pіlіpenкo V. А. and Sheremet V. N. (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6.. Т. 17, № 1. pp. 1-6.
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Abstract
We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | Богдан Володимирович Свищ |
| Date Deposited: | 25 Nov 2014 14:16 |
| Last Modified: | 15 Aug 2015 13:28 |
| URI: | https://eprints.zu.edu.ua/id/eprint/14144 |
| ДСТУ 8302:2015: | On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step / А. V. Sachenko та ін. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6.. 2014. Т. 17, № 1. pp. 1-6. |
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