Chemical treatment of Cd1-xMnxTe single crystals with Н2О2-HI-citric acid aqueous solutions

The process of CdTe and Cd1–xMnxTe dissolution in 30 % H2O2–HI–citric acid
solutions under reproducible hydrodynamic conditions has been studied. The equal
dissolution rate surfaces (Gibbs diagrams) have been plotted. Limiting stages of the
semiconductor dissolution process have been determined. Regions of polishing, selective
and unpolishing solutions in the mentioned system have been ascertained. The influence
of Mn concentrations in solid solutions on the etching rate and quality has been
established.