A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides

The paper presents a method for fast calculating the electronic states in twodimensional
quantum structures based on AIIIBV nitrides. The method is based on the
representation of electronic states in the form of a linear combination of bulk wave
functions of materials, from which quantum structures are made. The parameters and
criteria for the selection of bulk wave functions that provides fast convergence of the
numerical procedures for calculating the eigenvalues of the quantum Hamiltonian have
been considered. The results of the calculations have been given both for one polar
InGaN/GaN quantum well and for a system of several quantum wells. Being based on the
full band structure of AIIIBV nitrides with a wurtzite-type crystal lattice, the proposed
approach takes into account the states far from the center of the Brillouin zone, while
preserving the computational efficiency of traditional methods of envelope function in
approximating the effective mass.