Malyutenko V. K., Zinovchuk A. V. and Malyutenko O. Y. (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology. Т. 23. pp. 085004-1.
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Abstract
Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3–5 μm band. Light
confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The
effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 μm emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | current crowding, InAsSb/InAs, light emitting devices |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | Богдан Володимирович Свищ |
| Date Deposited: | 21 Nov 2012 13:57 |
| Last Modified: | 10 Oct 2016 12:09 |
| URI: | https://eprints.zu.edu.ua/id/eprint/8344 |
| ДСТУ 8302:2015: | Malyutenko V. K. and Zinovchuk A. V. and Malyutenko O. Y. Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology. 2008. Т. 23. pp. 085004-1. |
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