Sorokіn V. М., Konakova R. V., Kudryk Y. Y. and Zinovchuk A. V. (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs. Semiconductor Physics, Quantum Electronics & Optoelectronics. Т. 15, № 12. pp. 124-128. ISSN 1605-6582.
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Abstract
We present a setup and procedure of studying p-n junction–package thermal
resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of
LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and
LED chip are separated.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | thermal resistance, light emitting diodes, nitrides |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | Богдан Володимирович Свищ |
| Date Deposited: | 21 Nov 2012 13:58 |
| Last Modified: | 10 Oct 2016 12:03 |
| URI: | https://eprints.zu.edu.ua/id/eprint/8347 |
| ДСТУ 8302:2015: | Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs / V. М. Sorokіn та ін. Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. Т. 15, № 12. pp. 124-128. |
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