Kudryk Y. Y., Ткаченко О. К. and Zinovchuk A. V. (2012) Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding. Semiconductor Science Technology. Т. 27, № 5.
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Abstract
Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well
InGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is
analysed using the modified rate equation model that takes into account the current crowding
effect at different temperatures. The results of calculations are consistent with the fact that
droop in IQE at higher currents originates from Auger recombination increased by current
crowding. It is shown that unusual experimentally observed temperature dependence of the
efficiency droop can be explained by stronger lateral nonuniformity of carrier injection at low
temperatures without any assumptions about carrier delocalization from In-rich regions in
quantum wells.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | efficiency droop, InGaN/GaN, current crowding |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | Богдан Володимирович Свищ |
| Date Deposited: | 21 Nov 2012 14:02 |
| Last Modified: | 10 Oct 2016 12:07 |
| URI: | https://eprints.zu.edu.ua/id/eprint/8353 |
| ДСТУ 8302:2015: | Kudryk Y. Y. and Ткаченко О. К. and Zinovchuk A. V. Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding. Semiconductor Science Technology. 2012. Т. 27, № 5. |
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