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 | перехід на Верхній рівень |
Malyutenko V. K., Zinovchuk A. V., Malyutenko O. Y. (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology, 23. 085004-1.
Malyutenko V. K., Malyutenko O. Y., Zinovchuk A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter, 89. С. 201114–201117. ISSN 1077-3118
Malyutenko V. K., Malyutenko O. Y., Zinovchuk A. V., Zakheіm А. L. (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs. Proceedings of SPIE, 5941. 59411K-1.
