ІФН ім. В.Є. Лашкарьова НАНУ (2013) Патент 83664 Україна, МПК Н01L 21/268. Спосіб створення омічного контакту до InP та GaAs. .
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| Item Type: | Patent |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | С.В. Новицький |
| Date Deposited: | 23 Apr 2014 09:42 |
| Last Modified: | 15 Aug 2015 09:16 |
| URI: | https://eprints.zu.edu.ua/id/eprint/11036 |
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