Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission

Zinovchuk A. V. and Tkachenko A. K. (2011) Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission. Semiconductors. Т. 45, № 1. pp. 61-65. ISSN 1063-7826.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching
Depositing User:	Богдан Володимирович Свищ
Date Deposited:	30 Mar 2016 16:14
Last Modified:	30 Mar 2016 16:14
URI:	https://eprints.zu.edu.ua/id/eprint/20653
ДСТУ 8302:2015:	Zinovchuk A. V. and Tkachenko A. K. Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission. Semiconductors. 2011. Т. 45, № 1. pp. 61-65.

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