Malyutenko V. K., Malyutenko O. Y. and Zinovchuk A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter. Т. 89. pp. 201114-201117. ISSN 1077-3118.
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Abstract
The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several
wavelengths inside the 3–5 mkm band were tested. Light pattern, radiation apparent temperature
Ta, thermal resistance, and self-heating details were characterized at T=300 K in microscale by
calibrated infrared cameras operating in the 3–5 and 8–12 mkm bands. The authors show that LEDs
dynamically simulate very hot Ta=750 K targets as well as cold objects and low observable. They
resume that low cost LEDs enable a platform for photonic scene projection devices able to compete
with thermal microemitter technology. Proposals on how to further increase LEDs performance are
given.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | InAsSbP/InAs, light emitting diodes, dynamic scene projection |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | Богдан Володимирович Свищ |
| Date Deposited: | 21 Nov 2012 15:24 |
| Last Modified: | 18 Jul 2024 14:04 |
| URI: | https://eprints.zu.edu.ua/id/eprint/8286 |
| ДСТУ 8302:2015: | Malyutenko V. K. and Malyutenko O. Y. and Zinovchuk A. V. Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter. 2006. Т. 89. pp. 201114-201117. |
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