Malyutenko V. K., Malyutenko O. Y., Zinovchuk A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter. Т. 89. С. 201114–201117. ISSN 1077-3118.
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Анотація
The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several
wavelengths inside the 3–5 mkm band were tested. Light pattern, radiation apparent temperature
Ta, thermal resistance, and self-heating details were characterized at T=300 K in microscale by
calibrated infrared cameras operating in the 3–5 and 8–12 mkm bands. The authors show that LEDs
dynamically simulate very hot Ta=750 K targets as well as cold objects and low observable. They
resume that low cost LEDs enable a platform for photonic scene projection devices able to compete
with thermal microemitter technology. Proposals on how to further increase LEDs performance are
given.
| Тип ресурсу: | Стаття |
|---|---|
| Ключові слова: | InAsSbP/InAs, light emitting diodes, dynamic scene projection |
| Класифікатор: | Q Наука > QC Фізика |
| Відділи: | Фізико-математичний факультет > Кафедра фізики та методики її навчання |
| Користувач: | Богдан Володимирович Свищ |
| Дата подачі: | 21 Лист 2012 13:24 |
| Оновлення: | 18 Лип 2024 11:04 |
| URI: | https://eprints.zu.edu.ua/id/eprint/8286 |
| ДСТУ 8302:2015: | Malyutenko V. K., Malyutenko O. Y., Zinovchuk A. V. Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter. 2006. Т. 89. С. 201114–201117. |
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