Kudryk Y. Y. and Zinovchuk A. V. (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes. Technical Physics Letters. Т. 38, № 5. pp. 14-20. ISSN 1090-6533.
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Abstract
The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-
emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied.
Calculations based on a modified model of recombination coefficients show that current crowding leads to a
significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23%
at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding
should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR
LEDs.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Current Crowding, Light-Emitting Diodes,InAsSb/InAs |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Methods of Its Teaching |
| Depositing User: | Богдан Володимирович Свищ |
| Date Deposited: | 22 Apr 2016 11:53 |
| Last Modified: | 10 Oct 2016 12:00 |
| URI: | https://eprints.zu.edu.ua/id/eprint/8349 |
| ДСТУ 8302:2015: | Kudryk Y. Y. and Zinovchuk A. V. The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes. Technical Physics Letters. 2012. Т. 38, № 5. pp. 14-20. |
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