The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes

The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-
emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied.
Calculations based on a modified model of recombination coefficients show that current crowding leads to a
significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23%
at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding
should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR
LEDs.