Items where Author is "Novytsкyі, S. V."

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Article

Novytsкyі, S. V. (2013) Some methodological aspects of studying ohmic contacts to n-InP. materials of a conf. [XIV International conf. «Physics and technology of thin films and nanosystems» (ICPTTFN-XIV)], (Ivano-Frankivsk, Ukraine, 20—25 may 2013 y.). p. 437.

Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). p. 49.

Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А. (2012) Mechanism of contact resistance formation in ohmic contacts with high dislocation density. Journal of Applied Physics, 111 (8). 083701-083701. ISSN 0021-8979

Novytsкyі, S. V. (2011) Effect of thermal annealing on the electrical parameters of ohmic contacts to n-n+-n++-InP. Materials of a conf. [XIII International conf. «Physics and technology of thin films and nanosystems» (ICPTTFN-XIII)]Ivano-Frankivsk, Ukraine, 16—21 May 2011 y.), 1. p. 112.

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