Items where Author is "Boltovets N. S."

Article

Sachenko А. V., Belyaev А. Е., Boltovets N. S., Vіnogradov А. О., Pіlіpenкo V. А. and Sheremet V. N. (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6.. Т. 17, № 1. pp. 1-6.

Sachenko А. V., Belyaev А. Е., Boltovets N. S., Konakova R. V., Kudryк Y. Y., Novytsкyі S. V., Sheremet V. N., Lі J. and Vіtusevіch S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). p. 49.

Sachenko А. V., Belyaev А. Е., Boltovets N. S., Konakova R. V., Kudryк Y. Y., Novytsкyі S. V., Sheremet V. N., Lі J. and Vіtusevіch S. А. (2012) Mechanism of contact resistance formation in ohmic contacts with high dislocation density. Journal of Applied Physics. Т. 111, № 8. p. 083701. ISSN 0021-8979.