Елементи, в яких автор: "Sachenкo, А. V."

Стаття

Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Vіnogradov, А. О., Pіlіpenкo, V. А., Sheremet, V. N. (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1). с. 1-6.

Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). с. 49.

Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А. (2012) Mechanism of contact resistance formation in ohmic contacts with high dislocation density. Journal of Applied Physics, 111 (8). 083701-083701. ISSN 0021-8979