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Zinovchuk, A. V., Stepanchikov, D. A., Vasylieva, R. Yu., Slipokurov, V. S. (2023) Fluctuations of Piezoelectric Polarization in III-Nitride Quantum Wells. Ukrainian Journal of Physics, 68 (1). с. 47-52. ISSN 2071-0186
Slipokurov, V. A., Korniychuk, P. P., Zinovchuk, A. V. (2023) A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides. Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (2). с. 165-172. ISSN 1605-6582
Sorokіn, V. М., Konakova, R. V., Kudryk, Y. Y., Zinovchuk, A. V. (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs. Semiconductor Physics, Quantum Electronics & Optoelectronics, 15 (12). с. 124-128. ISSN 1605-6582
Kudryk, Y. Y., Ткаченко, О. К., Zinovchuk, A. V. (2012) Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding. Semiconductor Science Technology, 27 (5).
Kudryk, Y. Y., Zinovchuk, A. V. (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes. Technical Physics Letters, 38 (5). с. 14-20. ISSN 1090-6533
Kudryk, Y. Y., Zinovchuk, A. V. (2011) Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading. Semiconductor Science and Technology, 26. 095007-1. ISSN 1361-6641
Zinovchuk, A. V., Tkachenko, A. K. (2011) Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission. Semiconductors, 45 (1). с. 61-65. ISSN 1063-7826
Malyutenko, V. K., Zinovchuk, A. V., Malyutenko, O. Y. (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology, 23. 085004-1.
Zinovchuk, A. V., Malyutenko, O. Yu., Malyutenko, V. K., Podoltsev, A. D., Vilisov, A. A. (2008) The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes. Journal Of Applied Physics, 104. ISSN 1089-7550
Malyutenko, V. K., Zinovchuk, A. V. (2006) Mid-infrared LEDs versus thermal emitters in IR dynamic scene simulation devices. Proceedings of SPIE, 6368. 63680D-1. ISSN 9780819464668
Malyutenko, V. K., Malyutenko, O. Y., Zinovchuk, A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter, 89. с. 201114-201117. ISSN 1077-3118
Malyutenko, V. K., Malyutenko, O. Y., Zinovchuk, A. V., Zakheіm, А. L. (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs. Proceedings of SPIE, 5941. 59411K-1. ISSN 9780819459466
Zinovchuk, A. V., Gryschyк, А. М. (2018) Alloy-assisted Auger recombination in InGaN. Optical and Quantum Electronics.
