Ресурси де є автор Zinovchuk A. V.

Стаття

Zinovchuk A. V., Stepanchikov D. A., Vasylieva R. Yu., Slipokurov V. S. (2023) Fluctuations of Piezoelectric Polarization in III-Nitride Quantum Wells. Ukrainian Journal of Physics. Т. 68, № 1. С. 47–52. ISSN 2071-0186.

Slipokurov V. A., Korniychuk P. P., Zinovchuk A. V. (2023) A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides. Semiconductor Physics, Quantum Electronics & Optoelectronics. Т. 26, № 2. С. 165–172. ISSN 1605-6582.

Kudryk Y. Y., Zinovchuk A. V. (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes. Technical Physics Letters. Т. 38, № 5. С. 14–20. ISSN 1090-6533.

Sorokіn V. М., Konakova R. V., Kudryk Y. Y., Zinovchuk A. V. (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs. Semiconductor Physics, Quantum Electronics & Optoelectronics. Т. 15, № 12. С. 124–128. ISSN 1605-6582.

Kudryk Y. Y., Ткаченко О. К., Zinovchuk A. V. (2012) Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding. Semiconductor Science Technology. Т. 27, № 5.

Kudryk Y. Y., Zinovchuk A. V. (2011) Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading. Semiconductor Science and Technology. Т. 26. С. 095007–1. ISSN 1361-6641.

Zinovchuk A. V., Tkachenko A. K. (2011) Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission. Semiconductors. Т. 45, № 1. С. 61–65. ISSN 1063-7826.

Malyutenko V. K., Zinovchuk A. V., Malyutenko O. Y. (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology. Т. 23. С. 085004–1.

Zinovchuk A. V., Malyutenko O. Yu., Malyutenko V. K., Podoltsev A. D., Vilisov A. A. (2008) The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes. Journal Of Applied Physics. Т. 104. ISSN 1089-7550.

Malyutenko V. K., Zinovchuk A. V. (2006) Mid-infrared LEDs versus thermal emitters in IR dynamic scene simulation devices. Proceedings of SPIE. Т. 6368. С. 63680D–1.

Malyutenko V. K., Malyutenko O. Y., Zinovchuk A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter. Т. 89. С. 201114–201117. ISSN 1077-3118.

Malyutenko V. K., Malyutenko O. Y., Zinovchuk A. V., Zakheіm А. L. (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs. Proceedings of SPIE. Т. 5941. С. 59411K–1.

Інше

Zinovchuk A. V., Gryschyк А. М. (2018) Alloy-assisted Auger recombination in InGaN. Optical and Quantum Electronics.