Items where Author is "Zinovchuk A. V."

Article

Zinovchuk A. V., Stepanchikov D. A., Vasylieva R. Yu. and Slipokurov V. S. (2023) Fluctuations of Piezoelectric Polarization in III-Nitride Quantum Wells. Ukrainian Journal of Physics. Т. 68, № 1. pp. 47-52. ISSN 2071-0186.

Slipokurov V. A., Korniychuk P. P. and Zinovchuk A. V. (2023) A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides. Semiconductor Physics, Quantum Electronics & Optoelectronics. Т. 26, № 2. pp. 165-172. ISSN 1605-6582.

Kudryk Y. Y. and Zinovchuk A. V. (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes. Technical Physics Letters. Т. 38, № 5. pp. 14-20. ISSN 1090-6533.

Sorokіn V. М., Konakova R. V., Kudryk Y. Y. and Zinovchuk A. V. (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs. Semiconductor Physics, Quantum Electronics & Optoelectronics. Т. 15, № 12. pp. 124-128. ISSN 1605-6582.

Kudryk Y. Y., Ткаченко О. К. and Zinovchuk A. V. (2012) Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding. Semiconductor Science Technology. Т. 27, № 5.

Kudryk Y. Y. and Zinovchuk A. V. (2011) Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading. Semiconductor Science and Technology. Т. 26. pp. 095007-1. ISSN 1361-6641.

Zinovchuk A. V. and Tkachenko A. K. (2011) Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission. Semiconductors. Т. 45, № 1. pp. 61-65. ISSN 1063-7826.

Malyutenko V. K., Zinovchuk A. V. and Malyutenko O. Y. (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology. Т. 23. pp. 085004-1.

Zinovchuk A. V., Malyutenko O. Yu., Malyutenko V. K., Podoltsev A. D. and Vilisov A. A. (2008) The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes. Journal Of Applied Physics. Т. 104. ISSN 1089-7550.

Malyutenko V. K. and Zinovchuk A. V. (2006) Mid-infrared LEDs versus thermal emitters in IR dynamic scene simulation devices. Proceedings of SPIE. Т. 6368. pp. 63680D-1.

Malyutenko V. K., Malyutenko O. Y. and Zinovchuk A. V. (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection. Applied Physics Letter. Т. 89. pp. 201114-201117. ISSN 1077-3118.

Malyutenko V. K., Malyutenko O. Y., Zinovchuk A. V. and Zakheіm А. L. (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs. Proceedings of SPIE. Т. 5941. pp. 59411K-1.

Other

Zinovchuk A. V. and Gryschyк А. М. (2018) Alloy-assisted Auger recombination in InGaN. Optical and Quantum Electronics.